| DOI | Trouver le DOI : https://doi.org/10.1063/1.4848322 |
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| Auteur | Rechercher : Whiteway, Eric; Rechercher : Bernard, Simon; Rechercher : Yu, Victor1; Rechercher : Austing, D. Guy; Rechercher : Hilke, Michael |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de sécurité et de rupture
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| Format | Texte, Article |
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| Conférence | The Physics of Semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012, July 29th-August 3rd, 2012, Zurich, Switzerland |
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| Résumé | Using very uniform large scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a D+D' peak corresponding to a double phonon process involving both an inter- and intra-valley phonon. In order to both eliminate substrate effects and to probe large areas, we undertook to study Raman scattering for large scale chemical vapor deposition (CVD) grown graphene using two different isotopes (C12 and C13) so that we can effectively exclude and subtract the substrate contributions, since a heavier mass downshifts only the vibrational properties, while keeping all other properties the same. |
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| Date de publication | 2013-12-31 |
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| Maison d’édition | AIP |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23001793 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | ec8afa05-5892-42fa-b2c4-0d41967616a6 |
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| Enregistrement créé | 2017-04-07 |
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| Enregistrement modifié | 2020-04-22 |
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