Strong field processes inside gallium arsenide

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1088/0953-4075/47/20/204025
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Affiliation
  1. National Research Council of Canada
  2. National Research Council of Canada. Security and Disruptive Technologies
FormatText, Article
Subjectsemiconductor materials; GaAs; strong field; ultra-fast; ionization
Abstract
Publication date
PublisherIOP Publishing
In
LanguageEnglish
Peer reviewedYes
NPARC number21276153
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Record identifieree388b42-4349-4e7e-bee8-7a9290f5b33a
Record created2015-09-28
Record modified2023-08-11
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