Strong field processes inside gallium arsenide

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DOIResolve DOI: http://doi.org/10.1088/0953-4075/47/20/204025
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TypeArticle
Journal titleJournal of Physics B: Atomic, Molecular and Optical Physics
ISSN0953-4075
Volume47
Issue20
Article number204025
SubjectSemiconductor materials; GaAs; Strong field; Ultra-fast; Ionization
Abstract
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; Security and Disruptive Technologies
Peer reviewedYes
NPARC number21276153
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Record identifieree388b42-4349-4e7e-bee8-7a9290f5b33a
Record created2015-09-28
Record modified2016-05-09
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