Growth and characterization of Si/SiGe strained-layer superlattices on bulk single-crystal SiGe and Si substrates

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DOIResolve DOI: http://doi.org/10.1016/S0022-0248(03)01018-2
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume253
IssueJune
Pages7784; # of pages: 8
SubjectA3. superlattices; A3. chemical vapor deposition processes; B1. Germanium silicon alloys
Abstract
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences; NRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10137063
NRC number1086
NPARC number5764553
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Record identifiere118db86-e47d-41db-8b25-e790938198cc
Record created2009-03-29
Record modified2016-05-09
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