Inkjet printable and low annealing temperature gate-dielectric based on polymethylsilsesquioxane for flexible n-channel OFETs

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DOIResolve DOI: http://doi.org/10.1016/j.orgel.2015.12.023
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TypeArticle
Journal titleOrganic Electronics: physics, materials, applications
ISSN1566-1199
Volume30
Pages213218; # of pages: 6
SubjectAnnealing; Dielectric materials; Electric fields; Gate dielectrics; Glass; Heterojunction bipolar transistors; High electron mobility transistors; Leakage currents; Organic field effect transistors; Reconfigurable hardware; Silver; Spin glass; Transistors; Flexible electronic devices; High breakdown voltage; High electric fields; N-channel transistors; Polymethylsilsesquioxane; Reproducibilities; Spin on glass; Field effect transistors
Abstract
Publication date
PublisherElsevier
LanguageEnglish
AffiliationNational Research Council Canada; Information and Communication Technologies
Peer reviewedYes
NPARC number21277481
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Record identifierd7f07854-a362-4e1e-92d0-2310972cec54
Record created2016-03-09
Record modified2016-05-09
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