Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

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DOIResolve DOI: http://doi.org/10.1016/j.nimb.2015.07.045
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TypeArticle
Journal titleNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
ISSN0168-583X
Volume359
Pages99106
SubjectIII–V semiconductors; Ion implantation; Primary and secondary defects; Hall effect; X-ray diffraction
Abstract
Publication date
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23000819
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Record identifierce326f9d-5f08-48ef-94e2-4554edc3c8c9
Record created2016-10-17
Record modified2016-10-17
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