Resolving and tuning carrier capture rates at a single silicon atom gap state

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DOIResolve DOI: http://doi.org/10.1021/acsnano.7b07068
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TypeArticle
Journal titleACS Nano
ISSN1936-0851
1936-086X
Subjectcarrier-capture rates; dangling bonds; noncontact atomic force microscopy; silicon; time-resolved scanning tunneling microscopy
Abstract
Publication date
PublisherACS
LanguageEnglish
AffiliationNanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number23002433
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Record identifierb681fbd1-f23a-452f-b3de-d297f86471a9
Record created2017-11-10
Record modified2017-11-10
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