Photoluminescence study of initial interdiffusion of SiGe/Si quantum wells grown by ultrahigh vacuum-chemical vapor deposition

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DOIResolve DOI: http://doi.org/10.1063/1.117609
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume69
Issue10
Pages14441446; # of pages: 3
SubjectANNEALING; CVD; DIFFUSION; GERMANIUM SILICIDES; INTERFACE STRUCTURE; PHOTOLUMINESCENCE; QUANTUM WELLS; SILICON; STRAINS
Abstract
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
Identifier10100234
NRC number1123
NPARC number5763471
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Record identifierb1a33b57-8703-455a-87c4-d4ee95652628
Record created2009-03-29
Record modified2016-05-09
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