Photoluminescence properties of strained molecular-beam epitaxy Si1−xGex/Si multiquantum wells

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DOIResolve DOI: http://doi.org/10.1116/1.586733
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TypeArticle
Journal titleJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement and Phenomena
ISSN10711023
Volume11
IssueMay 3
Pages899901; # of pages: 3
Abstract
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LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedNo
Identifier10495228
NRC number1154
NPARC number5765191
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Record identifier9891ab4a-910f-4a0a-bb2b-49a85746b8ca
Record created2009-03-29
Record modified2016-05-09
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