Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

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DOIResolve DOI: http://doi.org/10.1088/1367-2630/17/7/073023
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TypeArticle
Journal titleNew Journal of Physics
ISSN1367-2630
Volume17
Issue7
Article number073023
SubjectSTM, scanning tunneling spectroscopy, silicon dangling bond, charge state transition, silicon atomic quantum dot
Abstract
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number21276129
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Record identifier91489134-57e6-406a-8e37-3daf84adbedd
Record created2015-09-25
Record modified2016-05-09
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