Comparison of Ion Implantation Aroaches in the Fabrication of AlGaN/GaN HFETs: Classical vs Through the Gate Metal

  1. (PDF, 1 MB)
AuthorSearch for: ; Search for: ; Search for: ; Search for:
ConferenceIPAP Conference Series 1, 2000, Tokyo
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number5212406
Export citationExport as RIS
Report a correctionReport a correction
Record identifier8c5fb574-c501-447c-8880-fa21421e2fd8
Record created2008-12-02
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
Date modified: