Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/31/10/105017
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TypeArticle
Journal titleSemiconductor Science and Technology
ISSN0268-1242
1361-6641
Volume31
Issue10
Pages105017-1105017-8
Subjectsilicon thin films; terahertz spectroscopy; grain boundaries; low-temperature MBE; carrier dynamics
Abstract
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PublisherIOP : Institute of Physics
LanguageEnglish
AffiliationInformation and Communication Technologies; Measurement Science and Standards; National Research Council Canada
Peer reviewedYes
NPARC number23000872
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Record identifier6f64c874-c522-481f-a5d1-f0a597fd5e33
Record created2016-10-31
Record modified2016-10-31
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