Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths

Download
  1. (PDF, 615 KB)
  2. Get@NRC: Tuning the electrically evaluated electron Landé g factor in GaAs quantum dots and quantum wells of different well widths (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1103/PhysRevB.90.235310
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titlePhysical Review B - Condensed Matter and Materials Physics
ISSN1098-0121
Volume90
Issue23
Article number235310
Abstract
Publication date
PublisherAmerican Physical Society
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21275519
Export citationExport as RIS
Report a correctionReport a correction
Record identifier5866e9d8-d244-4cf3-9f80-6e71a61623d9
Record created2015-07-14
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
Date modified: