Contactless electroreflectance of GaN0.025As0.975-xSbx/GaAs quantum wells with high Sb content (0.27 <= x <= 0.33): the determination of band gap discontinuity

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DOIResolve DOI: http://doi.org/10.1063/1.2370506
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TypeArticle
Journal titleApplied physics letters
ISSN0003-6951
Volume89
Article number171914
Abstract
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21276876
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Record identifier53e70342-b7f1-4f93-ab24-d8c3daa480a6
Record created2015-10-29
Record modified2016-05-09
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