Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

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DOIResolve DOI: http://doi.org/10.1117/12.2258616
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TypeArticle
Proceedings titleInfrared Technology and Applications XLIII
Series titleProceedings of SPIE; no. 10177
ConferenceInfrared Technology and Applications XLIII, 9-13 April 2017, Anaheim, CA, USA
ISSN0277-786X
1996-756X
ISBN9781510608559
Pages# of pages: 9
SubjectInGaAs; SWIR; minority carrier diffusion length; mobility; lifetime; doping dependence; modeling and simulation; dark current; pixel pitch
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PublisherSociety of Photo-optical Instrumentation Engineers
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LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002213
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Record identifier455842fb-15b9-482b-b084-5b0026431a2d
Record created2017-09-06
Record modified2017-09-13
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