Molecular beam epitaxy growth of 1.55 mm GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2006.02.027
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TypeArticle
ISSN0022-0248
Volume29
Issue1
Pages8693; # of pages: 8
SubjectHigh resolution X-ray diffraction; Transmission electron microscopy; Secondary ion mass spectrometry; Molecular beam epitaxy; GaInNAsSb; InGaNAsSb
Abstract
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LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21276881
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Record identifier45142e4d-de8d-42cb-9e60-12efb7c6b409
Record created2015-10-30
Record modified2016-05-09
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