Hysteresis free carbon nanotube thin film transistors comprising hydrophobic dielectrics

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DOIResolve DOI: http://doi.org/10.1063/1.4937223
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume107
Issue24
Article number243301
SubjectDielectric materials; Hydrophobicity; Hysteresis; Nanotubes; Single-walled carbon nanotubes (SWCN); Thin film transistors; Thin films; Threshold elements; Threshold voltage; Transistors; Device encapsulations; Dielectric stress; Hole conduction; Hysteresis free; Methyl silsesquioxanes; Polyvinylphenol; Threshold gate voltage; Carbon nanotubes
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PublisherAIP Publishing
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21277404
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Record identifier44d4a5d8-ce21-4260-9dca-394e940bc72e
Record created2016-03-09
Record modified2016-05-09
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