Minority carrier diffusion lengths and mobilities in low-doped n-InGaAs for focal plane array applications

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TypeArticle
Journal titleCondensed Matter
Article numberarXiv:1707.08023
Pages# of pages: 9
SubjectInGaAs; SWIR; minority carrier diffusion length; mobility; lifetime; doping dependence; modeling and simulation; dark current; pixel pitch
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PublisherCornell University Library
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LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002212
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Record identifier443a38d9-d650-4b20-82b1-6701d5ba314a
Record created2017-09-06
Record modified2018-08-31
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