Radiation hardness of AlGaAs n-i-p solar cells with higher bandgap intrinsic region

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DOIResolve DOI: http://doi.org/10.1016/j.solmat.2017.04.034
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TypeArticle
Journal titleSolar Energy Materials and Solar Cells
ISSN0927-0248
1879-3398
Volume168
Pages234240
SubjectAlGaAs; n-i-p solar cell; radiation hardness; end-of-life; diffusion length; device modeling
Abstract
Publication date
PublisherElsevier
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002159
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Record identifier3f2effdc-28d3-496f-afde-40ce9fac9de8
Record created2017-08-28
Record modified2017-08-28
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