A route to low temperature growth of single crystal GaN on sapphire

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DOIResolve DOI: http://doi.org/10.1039/C5TC01556A
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TypeArticle
Journal titleJournal of Materials Chemistry C
ISSN2050-7526
2050-7534
Volume3
Issue28
Pages74287436
Abstract
Publication date
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedYes
NPARC number23000661
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Record identifier28e0187c-eb42-4954-b597-a35bb30fa80b
Record created2016-08-18
Record modified2016-08-18
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