Heavy and light hole minority carrier transport properties in low-doped n-InGaAs lattice matched to InP

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DOIResolve DOI: http://doi.org/10.1063/1.5002677
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
1077-3118
Volume111
Issue16
Article number162107
Pages# of pages: 5
Abstract
Publication date
PublisherAIP Publishing
LanguageEnglish
AffiliationAdvanced Electronics and Photonics; Information and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002462
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Record identifier1bc4fc43-ad56-4926-8a26-d88a522f76c7
Record created2017-11-14
Record modified2017-11-14
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