Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process

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DOIResolve DOI: http://doi.org/10.1016/j.jcrysgro.2017.04.029
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TypeArticle
Journal titleJournal of Crystal Growth
ISSN0022-0248
Volume470
Pages149153
Subjectselective epitaxy; metalorganic vapor phase epitaxy; phosphides; semiconducting III-V materials; avalanche photodiodes
Abstract
Publication date
PublisherElsevier
LanguageEnglish
AffiliationInformation and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number23002183
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Record identifier179353aa-1332-4122-b610-a8e0a60afa5f
Record created2017-08-30
Record modified2017-08-30
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