DOI | Trouver le DOI : https://doi.org/10.1016/0968-4328(95)00020-8 |
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Auteur | Rechercher : Robertson, M. D.1; Rechercher : Corbett, J. M.; Rechercher : Webb, J. B.2; Rechercher : Jagger, J.; Rechercher : Currie, J. E. |
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Affiliation | - Conseil national de recherches du Canada. Institut d'innovation en piles à combustible du CNRC
- Conseil national de recherches du Canada. Institut Steacie des sciences moléculaires du CNRC
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Format | Texte, Article |
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Conférence | 22nd annual meeting of the Microscopical Society of Canada |
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Sujet | cumulative sum; Fourier filtering; high resolution electron microscopy; image simulations; lattice fringes; semiconductor bilayer; semiconductor superlattice; strain analysis; surface relaxation; surface roughnes |
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Résumé | A new technique that is independent of image contrast and robust to the presence of experimental noise is presented to analyze strains from high resolution electron microscopy (HREM) lattice images. This approach involves the analysis of the cumulative sum of deviations (CUSUM) in lattice-fringe spacings from a target value. The effects of surface roughness at an interface, and surface relaxation due to transmission electron microscope (TEM) sample preparation are discussed. The CUSUM method was applied to two simulated and two experimental HREM images of semiconductor strained layer structures in [] zone axis projection. The CUSUM technique was able to accurately reproduce the strain profiles from the simulated and experimental images in all cases studied except for the component of the strain in the slip direction (exx) of an edge dislocation in a simulated image. In this case, the strain field near the core appeared hemispherical rather than lobed as expected. |
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Date de publication | 1995 |
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Dans | |
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Numéro NPARC | 12339239 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | f85cf2ab-8132-4c8f-8afd-8d6879c2cd31 |
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Enregistrement créé | 2009-09-11 |
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Enregistrement modifié | 2020-04-29 |
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