DOI | Trouver le DOI : https://doi.org/10.1117/12.876172 |
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Auteur | Rechercher : Mi, Z.; Rechercher : Bianucci, P.; Rechercher : Li, F.; Rechercher : Tian, Z.; Rechercher : Veerasubramanian, V.; Rechercher : Kirk, A.G.; Rechercher : Plant, D.V.; Rechercher : Poole, P.J.1 |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Conférence | Silicon Photonics VI, January 23-26, 2011, San Francisco, CA, USA |
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Sujet | Coherent emission; Continuous wave lasing; Embedded quantum dots; Epitaxially grown; Foreign substrates; InAs quantum dots; InGaAsP; Micro-tubes; Microcavity laser; Microtube; Optical microcavities; Optical resonance; Quantum Dot; Room temperature; Self-organized; Silicon on insulator waveguide; Spectral properties; Standard photolithography; Strained bilayer films; Whispering gallery modes; Indium arsenide; Integration; Microcavities; Optical properties; Photolithography; Photonic devices; Quantum optics; Resonance; Resonators; Semiconducting silicon; Semiconducting silicon compounds; Semiconductor quantum dots; Quantum dot lasers |
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Résumé | We report on the fabrication, characterization and integration of semiconductor microtube lasers on silicon. These microtubes are fabricating using standard photolithography techniques on epitaxially grown strained bilayer films, and show remarkable spectral properties attributable to whispering-gallery-mode type optical resonances. We have demonstrated coherent emission coupled to the optical microcavity modes in both GaAs/InGaAs and InGaAsP microtubes with embedded quantum dots. Furthermore, the GaAs/InGaAs microtubes have shown room temperature, continuous wave lasing. The microtubes can be transferred to any foreign substrate without affecting their optical properties. Work is in progress to couple the tubes with integrated silicon-on-insulator waveguides. |
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Date de publication | 2011 |
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Maison d’édition | SPIE |
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Dans | |
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Série | |
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Langue | anglais |
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Publications évaluées par des pairs | Oui |
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Numéro NPARC | 21271282 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | f50cf6e8-4367-47e3-bc85-227d5511be8e |
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Enregistrement créé | 2014-03-24 |
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Enregistrement modifié | 2020-04-21 |
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