| Résumé | InP(100) surfaces were passivated with S using a wet chemical treatment. The structural properties of the passivated surface were studied with low-energy electron diffraction. In agreement with previous studies, a 1 × 1 pattern was observed for the as-passivated surface, while a 2 × 1 reconstruction was found for surfaces annealed at temperatures in the range 350 °C – 500 °C. Photoemission and inverse photoemission were used to examine the electronic properties of the surface. The sulfur treatment was found to remove both occupied and unoccupied states from the vicinity of the fundamental gap. The surface bandgap at the zone centre, Γ, on the passivated surface was measured to be 5.1 eV, as compared to 2.5 eV for the clean, sputter/annealed 2 × 4 surface. No partially filled bands were observed crossing the Fermi level. AES, Auger Electron Spectroscopy; LEED, Low-Energy Electron Diffraction; MISFET, Metal-Insulator-Semiconductor Field Effect Transistor; ML, Monolayer; RHEED, Reflection High-Energy Electron Diffraction; UHV, Ultra High Vacuum; XANES, X-ray Absorption Near Edge Spectroscopy; XPD, X-ray Photoelectron Diffraction; XPS, X-ray Photoelectron Spectroscopy |
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