| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-402-587 |
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| Auteur | Rechercher : Sham, T.K.; Rechercher : Naftel, S.J.; Rechercher : Bzowski, A.; Rechercher : Das, S.R.1; Rechercher : Xu, D.-X.1; Rechercher : Heald, S.M.; Rechercher : Brewe, D.; Rechercher : Kuhn, M. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1995 MRS Fall Meeting: Symposium H: Silicide Thin Films-Fabrication, Properties and Applications, November 27-30, 1995, Boston, Massachusetts, U.S.A. |
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| Résumé | PtSi thin films prepared by UHV sputter-deposition procedures on n-type Si(100) wafers have been studied with the following techniques: (a) X-ray absorption fine structure spectroscopy at the Si K-edge, Si L2,3-edge, and Pt L3-edge; (b) X-ray reflectivity at photon energies below and above the Pt L3-edge threshold and (c) Photoemission. These techniques provide valuable information about the electronic structure, morphology, local structure, thickness, density and roughness, and surface and interface properties of the films. Preliminary results from the application of these techniques to the study of several PtSi thin films (with thickness from several hundreds to thousands of Å) are reported. |
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| Date de publication | 1996 |
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| Dans | |
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| Série | |
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| Numéro NPARC | 12329050 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | e3a93dd0-5eb1-4b00-a389-034d192aeea9 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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