| DOI | Trouver le DOI : https://doi.org/10.1103/PhysRevB.50.16964 |
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| Auteur | Rechercher : Benzaquen, R.1; Rechercher : Benzaquen, M.; Rechercher : Charbonneau, S.1; Rechercher : Poole, P. J.1; Rechercher : Rao, T. Sudersena1; Rechercher : Lacelle, C.1; Rechercher : Roth, A.P.; Rechercher : Leonelli, R. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | We have measured the Hall mobility and Hall electronic concentration as a function of temperature of three low-compensation n-type InP epilayers of similar thickness grown by chemical-beam epitaxy. The Hall mobility of the samples was found to be exceptionally high at 77 K and significantly depressed at 300 K. Above the freeze-out region, strong Hall electronic excitation was consistently observed in the temperature range of ?35�300 K. These features are in excellent agreement with a model accounting for a broad band of localized deep-donor centers or complexes of unknown origin, centered at 160 meV below the conduction band. In addition, all samples showed an anomalous metal-like behavior at the lowest temperatures, instead of the expected strong localization regime. A broad luminescent band of ?11-meV linewidth linked to the presence of the band of deep donors was observed below the acceptor bound-exciton transition. Time-resolved photoluminescence and photoluminescence-excitation measurements supported the bound-exciton nature of the luminescent band. |
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| Date de publication | 1994-12-15 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12338540 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | de297275-d581-4e95-b558-02d5dfba2a77 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-27 |
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