| Résumé | Hydrogenation has proven to be an effective tool to open the band gap of graphene. In the present density functional study, we demonstrate that single-side-hydrogenated graphene is a semiconductor with an indirect band gap of 1.35 eV, which is in between the gapless graphene and wide band-gap graphane and surprisingly close to silicon. We show that its electronic structure and lattice characteristics are substantially different from those of graphene, graphone, or graphane. The lattice parameter and C-C bond length are found to be lengthened by 15% of those of graphene. Our binding-energy analysis confirms that such a single-sided hydrogenation leads to energetically stable material, making it a promising candidate as an organic semiconductor. © 2011 American Physical Society. |
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