DOI | Trouver le DOI : https://doi.org/10.1063/1.358913 |
---|
Auteur | Rechercher : Landheer, Dolf1; Rechercher : Xu, D-X; Rechercher : Tao, Ye1; Rechercher : Sproule, G1 |
---|
Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
---|
Format | Texte, Article |
---|
Sujet | ANNEALING; CV CHARACTERISTIC; CVD; DEPTH PROFILES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; INTERFACE STATES; MOS JUNCTIONS; PLASMA; SILICON OXIDES; THIN FILMS |
---|
Résumé | The effect of power on the electrical and interface properties of silicon dioxide films produced by direct plasma-enhanced chemical-vapor deposition, using nitrous oxide and silane with high helium dilution, has been investigated. Auger depth profiling measurements indicate that while the bulk of the films have no measurable impurities, the interface region contains about 1.6�1015 atoms/cm2 of nitrogen. In contrast to thermal oxides, there is no thick interface layer with a large intrinsic compressive stress. The interface-state densities of the films obtained from capacitance-voltage measurements on metal-oxide-semiconductor diodes increase with increasing plasma power, but these can be removed to some extent by high-temperature annealing at temperatures in the range 800�950 �C. The flatband voltage is relatively insensitive to plasma power. Thermal oxide samples have been subjected to the plasma processes and these also show evidence of plasma damage. A thin layer produced at the interface by a separate plasma oxynitridation process is shown to be incapable of protecting the Si/SiO2 interface from the plasma damage produced by subsequent high-power plasma deposition processes. The nature of the interface states is discussed. |
---|
Date de publication | 1995-02-15 |
---|
Dans | |
---|
Langue | anglais |
---|
Publications évaluées par des pairs | Oui |
---|
Numéro NPARC | 12328266 |
---|
Exporter la notice | Exporter en format RIS |
---|
Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
---|
Identificateur de l’enregistrement | b68e5e70-f293-43f6-a61e-2b2ca67999e9 |
---|
Enregistrement créé | 2009-09-10 |
---|
Enregistrement modifié | 2020-04-29 |
---|