| DOI | Trouver le DOI : https://doi.org/10.1063/1.3583559 |
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| Auteur | Rechercher : Dubey, G.1; Rechercher : Rosei, F.; Rechercher : Lopinski, G.P.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut Steacie des sciences moléculaires du CNRC
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| Format | Texte, Article |
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| Sujet | Accumulation modes; Accumulation threshold; Adsorption and reactions; Alkyl monolayers; Ambient atmosphere; Ambient conditions; Field-effect mobilities; Flat-band voltage; Gas-phase reactions; H-terminated surface; High vacuum; In-field; Molecular adsorption; N-channel devices; Reversible change; Sensing applications; Silicon on insulator; Adsorption; Field effect transistors; Monolayers; Semiconducting silicon; Semiconducting silicon compounds; Threshold voltage; Water vapor; Current voltage characteristics |
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| Résumé | Accumulation mode pseudo-MOSFETs formed on hydrogen terminated silicon-on-insulator (SOI-H) were used to probe molecular adsorption and reaction events. Current-voltage characteristics of such n-channel devices are found to be sensitive to the environment, with the accumulation threshold voltage, or flat-band voltage, exhibiting large reversible changes upon cycling between ambient atmosphere, high vacuum (≤10-5 Torr), and exposure to water and pyridine vapor at pressures in the Torr range. The field-effect mobility is found to be comparatively less affected through these transitions. Oxidation of the H-terminated surface in ambient conditions leads to irreversible shifts in both the flat-band voltage and the field-effect mobility. A photochemical gas phase reaction with decene is used to form a decyl monolayer on the SOI(100)-H surface. Formation of this monolayer is found to result in a relatively small shift of the threshold voltage and only a slight degradation of the field effect mobility, suggesting that alkyl monolayer dielectrics formed in this way could function as good passivating dielectrics in field effect sensing applications. © 2011 American Institute of Physics. |
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| Date de publication | 2011 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21271164 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | b5f29903-cb13-411e-9f88-a9b0e01e2233 |
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| Enregistrement créé | 2014-03-24 |
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| Enregistrement modifié | 2020-04-21 |
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