DOI | Trouver le DOI : https://doi.org/10.1006/spmi.1994.1075 |
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Auteur | Rechercher : Piva, P. G.1; Rechercher : Poole, P. J.1; Rechercher : Charbonneau, S.1; Rechercher : Koteles, E. S.1; Rechercher : Buchanan, M.1; Rechercher : Aers, G.1; Rechercher : Roth, A. P.1; Rechercher : Wasilewski, Z. R.1; Rechercher : Beauvals, J.; Rechercher : Goldberg, R. D. |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Résumé | Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated sequential ion implants and rapid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle. The effectiveness of broad area high energy implantation (8 MeV As4+) on QW intermixing was also established for GRINSCH (graded-index separate confinement heterostructure) QW laser structures grown in InGaAs/GaAs. Lastly, preliminary work illustrating the effects of implant temperature and ion current density was carried out for InGaAs/GaAsQWs. |
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Date de publication | 1994 |
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Dans | |
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Langue | anglais |
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Numéro NPARC | 12338044 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | b2ec9550-c628-4d03-9a50-f8308e29bc0f |
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Enregistrement créé | 2009-09-10 |
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Enregistrement modifié | 2020-04-27 |
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