| DOI | Trouver le DOI : https://doi.org/10.1557/PROC-441-175 |
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| Auteur | Rechercher : Naftel, S. J.; Rechercher : Sham, T. K.; Rechercher : Das, S. R.1; Rechercher : Xu, D.-X.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 1996 MRS Fall Meeting: Thin Films - Structure and Morphology, December 2-6, 1996, Boston, Massachusetts, U.S.A. |
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| Résumé | Platinum silicide films, with a typical thickness of several hundred Å, prepared on n-type Si(100) wafers by UHV mnagnetron sputter deposition followed by rapid thermal annealing, have been studied by Si L2,3-edge X-ray absorption near edge structure (XANES) using both total electron and total fluorescence yield detection. Samples of various annealing times were studied. XANES provides information on the electronic structure and morphology of the samples. By utilizing the sampling depth difference between the two detection methods, we can clearly see XANES data from each layer (eg. surface oxide, silicide) in the sample and can estimate the thickness of the oxide layer. |
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| Date de publication | 1997 |
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| Série | |
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| Langue | anglais |
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| Numéro NPARC | 12330135 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | a66b0491-609c-44db-a224-761d8503138a |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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