DOI | Trouver le DOI : https://doi.org/10.1063/1.119058 |
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Auteur | Rechercher : Allard, L. B.1; Rechercher : Liu, H. C.1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1 |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Sujet | aluminium compounds; CCD image sensors; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; optical frequency conversion; photodetectors; semiconductor epitaxial layers; semiconductor quantum wells |
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Résumé | We present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelength p-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed. |
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Date de publication | 1997-05-26 |
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Dans | |
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Langue | anglais |
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Numéro NPARC | 12337918 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 9041a654-91cd-4e59-9ecd-6a6aa868dc7e |
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Enregistrement créé | 2009-09-10 |
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Enregistrement modifié | 2020-03-20 |
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