| DOI | Trouver le DOI : https://doi.org/10.1016/0039-6028(96)00532-8 |
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| Auteur | Rechercher : Fafard, S.1; Rechercher : Raymond, S.1; Rechercher : Wang, G.; Rechercher : Leon, R.; Rechercher : Leonard, D.; Rechercher : Charbonneau, S.1; Rechercher : Merz, J. L.; Rechercher : Petroff, P. M.; Rechercher : Bowers, J. E. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Conférence | 11th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS XI), Nottingham, UK, August 7-11, 1995 |
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| Sujet | gallium arsenide; indium arsenide; molecular beam epitaxy; photoluminescence; quantum effects; quantum wells; self-assembly; surface tension |
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| Résumé | Several ensembles of self-assembled quantum dots (QDs) based on the AlInAsAl/GaAs and InGaAs/GaAs material systems have been investigated using photoluminescence (PL), PL excitation (PLE) and time-resolved PL (TRPL). The influence of the temperature is measured by monitoring sharp spectral features (as narrow as 90 μeV) obtained when probing the PL of small QD ensembles (few hundreds QDs). Thermionic emission of the photocarriers out of the QD potential is found to be the dominant mechanism leading to the thermal quenching of the PL and temperature-independent linewidths are observed up to the onset of the PL quenching. |
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| Date de publication | 1996-07-20 |
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| Langue | anglais |
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| Numéro NPARC | 12328785 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 88d1c8ee-2ea6-4a8b-a52f-f9035233112b |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-03-20 |
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