| DOI | Trouver le DOI : https://doi.org/10.1116/1.1689300 |
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| Auteur | Rechercher : Luo, H.1; Rechercher : Ban, D.1; Rechercher : Liu, H. C.1; Rechercher : SpringThorpe, A. J.1; Rechercher : Wasilewski, Z. R.1; Rechercher : Buchanan, M.1; Rechercher : Glew, R.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | aluminium compounds; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; integrated optoelectronics; light emitting diodes; optical frequency conversion; photodetectors; p-i-n photodiodes; semiconductor devices; wafer bonding |
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| Résumé | Wafer fusion is an important processing tool for heterogenous integration of different materials regardless of their lattice constants. It removes the limitation of conventional epitaxialgrowth techniques and introduces a design parameter for achieving high performance semiconductor devices. In this article, we propose and demonstrate a 1.5 μm to 0.87 μm optical upconversion device based on wafer fusion technology. The device consists of an In0.53Ga0.47As(InGaAs)p-i-nphotodetector and an AlGaAs/GaAs light-emitting diode(LED) integrated with wafer fusion. Incoming 1.5 μm light is absorbed by the InGaAsphotodetector and generates a photocurrent. The resultant photocurrent drives the GaAsLED, which emits radiation at 0.87 μm. An internal quantum efficiency of 20% and an external quantum efficiency of 0.27% was obtained at room temperature. The results show the potential of the upconversion device in near-infrared imaging applications. |
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| Date de publication | 2004-04-30 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12327600 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 57b9c79c-391b-447f-bf64-edadfb01f67b |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-17 |
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