DOI | Trouver le DOI : https://doi.org/10.1109/NANO.2006.247739 |
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Auteur | Rechercher : Lockwood, D. J.1; Rechercher : Wu, X.1; Rechercher : Baribeau, J.-M.1 |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Conférence | 6th IEEE Conference on Nanotechnology, 17-20 July 2006, Cincinnati, Ohio, USA |
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Résumé | Coherent Si1-xGexisland growth by molecular beam epitaxy is studied for a fixed growth temperature but for different Ge concentrations x in the range 0.37-0.56. A combined transmission electron microscope, x-ray diffraction, and Raman spectroscopy characterization of the samples showed that during growth the Ge migrates towards the center of the large islands to maintain epitaxial growth and that the most uniform structures are obtained at higher Ge composition when the built-in strain is also higher. |
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Date de publication | 2006 |
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Dans | |
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Langue | anglais |
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Numéro NPARC | 12346455 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 56001502-978b-4ba5-8cdb-d95fc36484f9 |
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Enregistrement créé | 2009-09-17 |
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Enregistrement modifié | 2020-04-22 |
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