| DOI | Trouver le DOI : https://doi.org/10.1109/ICIPRM.2012.6403364 |
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| Auteur | Rechercher : Pitts, O.J.1; Rechercher : Hisko, M.1; Rechercher : Benyon, W.1; Rechercher : Springthorpe, A.J.1 |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
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| Format | Texte, Article |
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| Conférence | 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM), 2012-08-27 - 2012-08-30, Santa Barbara, CA, USA |
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| Sujet | Diffusion processes; dark current; epitaxial layers; photodiodes |
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| Résumé | We investigated the diffusion of zinc into InP/InGaAs avalanche photodiode structures using dimethylzinc in an MOCVD reactor. Diffusion profiles were measured by secondary ion mass spectrometry and compared with cleaved cross-sections imaged by scanning electron microscopy, in order to accurately target the diffusion depth for device fabrication. The dependence of the diffusion depth on the diffusion temperature, partial pressures of dimethylzinc and phosphine, and diffusion time is reported. Diffused devices exhibit, in some cases, a step increase in dark current at or near the punch-through voltage. We show that the dark current above the punch-through voltage is proportional to the junction area and originates in the bulk of the material. The dependence of this bulk dark current contribution on the diffusion process parameters has been studied in detail, and a reduction of three orders of magnitude was achieved. |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21269124 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 5569572c-0825-4e16-912f-6d47a092fb79 |
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| Enregistrement créé | 2013-12-06 |
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| Enregistrement modifié | 2020-04-22 |
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