| DOI | Trouver le DOI : https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<243::AID-PSSA243>3.0.CO;2-Y |
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| Auteur | Rechercher : Webb, J. B.1; Rechercher : Tang, H.1; Rechercher : Bardwell, J. A.1; Rechercher : Coleridge, P.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | The growth of high mobility AlGaN/GaN heterostructures on insulating C‐doped GaN base layers by ammonia‐molecular beam epitaxy (ammonia‐MBE) is reported. The structures were grown using an initial ∼300 Å buffer layer of AlN grown by Magnetron Sputter Epitaxy. This was followed by the deposition of GaN and AlGaN epilayers using ammonia‐MBE. Semi‐insulating C‐doped GaN layers with resistivities greater than 106 Ω cm have been obtained using a methane ion source. Room temperature mobilities of up to 1211 cm2/Vs and 77 K mobiltitties of up to 5660 cm2/Vs have been measured for the two‐dimensional electron gas in the heterostructures grown. Well‐resolved Shubnikov‐de Haas oscillations have been observed in the low temperature magnetoresistance measurements. |
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| Date de publication | 1999-11-22 |
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| Maison d’édition | Wiley |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12327269 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 4a1a58b6-8845-45a1-9b54-3d3f46ccaa1b |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2022-03-10 |
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