| DOI | Trouver le DOI : https://doi.org/10.1103/PhysRevB.52.2823 |
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| Auteur | Rechercher : Fletcher, R.; Rechercher : Coleridge, P. T.1; Rechercher : Feng, Y.1 |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | The phonon drag thermopower of a two-dimensional electron gas at a GaAs/Ga1-xAlxAs heterojunction has been strongly attenuated by growing the sample on a heavily doped substrate and by working in the liquid 3He temperature range. As a consequence the diffusion thermopower dominates at T<0.5 K, at least at zero magnetic field. The low-field oscillations in the resistivity and thermopower have been investigated. The former behave essentially as predicted. The amplitude of the oscillations in the Nernst-Ettingshausen coefficient show the field and temperature dependence expected for diffusion, although the absolute magnitude is about a factor of 2 too large. The amplitude of the longitudinal thermopower oscillations does not behave as expected for diffusion, although the oscillations exhibit the predicted change in phase as a function of magnetic field. |
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| Date de publication | 1995-07-15 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12328344 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 42d02cc2-0150-4616-8aa9-0a1ded730f03 |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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