| DOI | Trouver le DOI : https://doi.org/10.1016/j.apsusc.2012.11.012 |
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| Auteur | Rechercher : Cao, W.; Rechercher : Masnadi, M.; Rechercher : Eger, S.; Rechercher : Martinson, M.; Rechercher : Xiao, Q.-F.; Rechercher : Hu, Y.-F.; Rechercher : Baribeau, J.-M.1; Rechercher : Woicik, J. C.; Rechercher : Hitchcock, A. P.; Rechercher : Urquhart, S. G. |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
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| Format | Texte, Article |
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| Sujet | Angle dependence; Angle-dependent; Compressive strain; High spatial resolution; Linear dichroism; NEXAFS; Si(1 0 0); Silicon-germanium alloys; Strain metrology; Strain-dependent; Strained-Si; Total electron yield; X-ray absorption spectrum; X-ray spectromicroscopy; Absorption spectra; Dichroism; Epitaxial growth; Germanium; Germanium alloys; Raman spectroscopy; Strain; Thin films; X ray absorption spectroscopy; Silicon |
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| Résumé | We have quantitatively measured the angle dependence in the Silicon 1s X-ray absorption spectra of strained Si1-xGex thin films prepared by epitaxial growth on Si(1 0 0) substrates, through surface sensitive total electron yield detection. The linear dichroism difference extracted from these angle dependent X-ray absorption spectra is proportional to the degree of strain, as measured separately by Raman spectroscopy. This quantitative relationship provides a means to measure the compressive strain in Si 1-xGex thin films. This strain-dependent X-ray absorption spectroscopy has the potential to realize a semiconductor strain metrology through high spatial resolution X-ray spectromicroscopy. |
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| Date de publication | 2012-11-09 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 21270370 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 406092d1-80c0-4a84-85c5-19e1f747326e |
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| Enregistrement créé | 2014-02-05 |
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| Enregistrement modifié | 2020-04-21 |
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