| DOI | Trouver le DOI : https://doi.org/10.1063/1.114964 |
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| Auteur | Rechercher : Peters, C. J.; Rechercher : Noël, J. P.1; Rechercher : Xu, D. X.1; Rechercher : Buchanan, M.1; Rechercher : Du, J.; Rechercher : Tarr, N. G. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | ANNEALING; ARSENIC ADDITIONS; CARRIER LIFETIME; CRYSTAL DEFECTS; DAMAGE; ION IMPLANTATION; MINORITY CARRIERS; MOLECULAR BEAM EPITAXY; SILICON |
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| Résumé | The residual ion damage due to low-energy ion implantation during molecular beam epitaxy growth was investigated by measuring the minority carrier lifetime in the base of a silicon bipolar transistor. The base was doped with As+ ions at 200 eV to a concentration of 1019 cm−3. Three samples were grown at temperatures of 500, 650, and 800 °C. The 500 °C sample had a minority carrier lifetime in the base ∼1/6 that of the samples grown at the higher temperatures. On annealing at 650 °C the lifetimes of all samples were essentially equal. The results indicate that at this dopant concentration the collision cascades caused by ion bombardment do not overlap. |
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| Date de publication | 1995-08-14 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12329065 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 31f3618a-9b55-4dbb-bef6-d04247bb826d |
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| Enregistrement créé | 2009-09-10 |
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| Enregistrement modifié | 2020-04-29 |
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