DOI | Trouver le DOI : https://doi.org/10.1116/1.3548875 |
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Auteur | Rechercher : Gurovich, B.A.; Rechercher : Prikhod'Ko, K.E.; Rechercher : Taldenkov, A.N.; Rechercher : Chumakov, N.K.; Rechercher : Fedorov, G.E.; Rechercher : Yakubovsky, A.Y.; Rechercher : Bogdanov, A.L.1 |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Sujet | Bismuth nanowires; Bismuth oxides; Contact pads; Dielectric matrixes; e-Beam lithography; Electrical property; Electron beam resist; High aspect ratio; Ion beam irradiation; matrix; Metal film; Metal nanowire; Metal oxides; Metal wires; Oxygen atom; Parallel nanowires; Selective removal; Single layer; Zeon Chemicals; Aspect ratio; Bismuth; Electric properties; Electric wire; Electron beam lithography; Fabrication; Ion beams; Irradiation; Metallic compounds; Nanowires; Oxygen; Protons; Metals |
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Résumé | A method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded into a matrix of a highly insulating dielectric-bismuth oxide. The metal film is formed in the process of reduction of the metal oxide by selective removal of oxygen atoms under irradiation by the beam of protons through a mask. The mask containing pairs of parallel nanowires with contact pads was fabricated using 50 kV electron-beam lithography in a single layer of 200-nm-thick ZEP-520 (Zeon Chemicals L.P., ZEP-520 electron-beam resist) electron-beam resist. Electrical properties of the fabricated nanowires have been studied. Broadening of the fabricated metal wires with respect to the initial mask width was found to be dependent on the energy of irradiating protons. This effect may be attributed to the scattering of protons in the oxide-film. It is shown that the method of selective atom removal combined with high aspect ratio e-beam lithography is a feasible technique for fabrication of metal nanowires embedded in a dielectric matrix of metal oxide. © 2011 American Vacuum Society. |
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Date de publication | 2011 |
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Dans | |
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Langue | anglais |
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Publications évaluées par des pairs | Oui |
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Numéro NPARC | 21271139 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 15d34570-d6ff-4ef7-a634-442c1998b80a |
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Enregistrement créé | 2014-03-24 |
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Enregistrement modifié | 2020-04-21 |
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