DOI | Trouver le DOI : https://doi.org/10.1016/S0026-2692(03)00037-5 |
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Auteur | Rechercher : Allen, C. Nì.1; Rechercher : Poole, P. J.1; Rechercher : Marshall, P.1; Rechercher : Raymond, S.1; Rechercher : Fafard, S. |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Conférence | 4th International Conference on Low-Dimensional Structures and Devices, 8-13 December 2002, Fortaleza, Ceara, Brazil |
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Résumé | Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP were grown on (100) InP substrate to form a laser diode. Two methods were used to achieve tuning: changing the laser cavity length or varying the temperature. Stimulated emission between ∼1.51 and ∼1.64 μm was observed depending on the cavity length and the QD barrier height. The threshold current density was decreased for longer cavities to a value as low as 49 A/cm2 at 77 K. The relation between temperature and lasing peak wavelength was measured to be ∼0.21 nm/K leading to room temperature lasing at ∼1.61 μm. |
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Date de publication | 2003 |
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Dans | |
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Langue | anglais |
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Numéro NPARC | 12744511 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 0ac4e585-065f-4cb5-a780-df9d0faf40b9 |
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Enregistrement créé | 2009-10-27 |
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Enregistrement modifié | 2020-04-02 |
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