| DOI | Trouver le DOI : https://doi.org/10.1109/3.502380 |
|---|
| Auteur | Rechercher : Liu, H. C.1; Rechercher : Li, Jianmeng1; Rechercher : Buchanan, M.1; Rechercher : Wasilewski, Z. R.1 |
|---|
| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
|
|---|
| Format | Texte, Article |
|---|
| Sujet | 234 to 466 A; 30 GHz; 5 to 6 ps; barrier thicknesses; frequency response; high-biasing field regime; high-frequency capability; high-frequency quantum-well infrared photodetectors; infrared detectors; intrinsic photoconductive lifetime; microwave measurement; microwave-rectification technique; packaged detectors; photoconducting devices; photodetectors; quantum-well infrared photodetectors; rectification; semiconductor quantum wells |
|---|
| Résumé | We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Å and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps. |
|---|
| Date de publication | 1996-06-01 |
|---|
| Dans | |
|---|
| Langue | anglais |
|---|
| Numéro NPARC | 12328348 |
|---|
| Exporter la notice | Exporter en format RIS |
|---|
| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
|---|
| Identificateur de l’enregistrement | 0103c132-1df2-4f93-9e1c-9ba675033316 |
|---|
| Enregistrement créé | 2009-09-10 |
|---|
| Enregistrement modifié | 2020-03-20 |
|---|
