DOI | Trouver le DOI : https://doi.org/10.1126/science.274.5291.1350 |
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Auteur | Rechercher : Fafard, S.1; Rechercher : Hinzer, K.1; Rechercher : Raymond, S.1; Rechercher : Dion, M.1; Rechercher : McCaffrey, J.1; Rechercher : Feng, Y.1; Rechercher : Charbonneau, S.1 |
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Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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Format | Texte, Article |
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Résumé | Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at sim 707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of sim 8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs. |
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Date de publication | 1996-11-22 |
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Dans | |
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Numéro NPARC | 12338451 |
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Exporter la notice | Exporter en format RIS |
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Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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Identificateur de l’enregistrement | 005caa69-3321-4130-af40-77529a006425 |
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Enregistrement créé | 2009-09-10 |
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Enregistrement modifié | 2020-03-20 |
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