Influence of crystalline Defects on Transport Properties of GaN Grown by Ammonia-Molecular Beam Epitaxy and Magnetron Sputter Epitaxy
Influence of crystalline Defects on Transport Properties of GaN Grown by Ammonia-Molecular Beam Epitaxy and Magnetron Sputter Epitaxy
DOI | Resolve DOI: https://doi.org/10.1007/s11664-000-0061-0 |
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Author | Search for: 1; Search for: 2; Search for: 1; Search for: ; Search for: 1; Search for: |
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Format | Text, Article |
Publication date | 2000 |
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NPARC number | 12339016 |
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Record identifier | feb9ff23-2696-4a30-b5f8-bc2059e4aabc |
Record created | 2009-09-11 |
Record modified | 2020-03-26 |
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