| DOI | Resolve DOI: https://doi.org/10.1364/OE.21.001317 |
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| Author | Search for: Briggs, R.M.; Search for: Frez, C.; Search for: Bagheri, M.; Search for: Borgentun, C.E.; Search for: Gupta, J.A.1; Search for: Witinski, M.F.; Search for: Anderson, J.G.; Search for: Forouhar, S. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | Absorption lines; Current thresholds; Distributed-feedback; Gas detection; InGaAsSb; Isotopologues; Modal characteristics; Multi-quantum well structures; Output power; Second orders; Single longitudinal mode; Single mode; Single mode emission; Molecular beam epitaxy; Ridge waveguides; Semiconductor lasers; Distributed feedback lasers |
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| Abstract | We demonstrate index-coupled distributed-feedback diode lasers at 2.65 μm that are capable of tuning across strong absorption lines of HDO and other isotopologues of H2O. The lasers employ InGaAsSb/AlInGaAsSb multi-quantum-well structures grown by molecular beam epitaxy on GaSb, and single-mode emission is generated using laterally coupled second-order Bragg gratings etched alongside narrow ridge waveguides. We verify nearcritical coupling of the gratings by analyzing the modal characteristics of lasers of different length. With an emission facet anti-reflection coating, 2-mm-long lasers exhibit a typical current threshold of 150 mA at 20 °C and are capable of emitting more than 25 mW in a single longitudinal mode, which is significantly higher than the output power reported for losscoupled distributed-feedback lasers operating at similar wavelengths. © 2013 Optical Society of America. |
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| Publication date | 2013 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21269831 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | feb1eff6-dd15-4a2e-8c33-1ec69e031e94 |
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| Record created | 2013-12-13 |
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| Record modified | 2020-04-22 |
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