| Author | Search for: Marshall, Gregory M.1; Search for: Bensebaa, Farid1; Search for: Dubowski, Jan J. |
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| Affiliation | - National Research Council of Canada. Energy, Mining and Environment
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| Format | Text, Article |
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| Conference | SurfaceAnalysis 2012: American Vacuum Society, Applied Surface Science Division Topical Conference, June 19-22, 2012, Richland, WA, U.S.A. |
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| Subject | angle-resolved XPS; alkanethiols; SAMs; fractional overlayer; GaAs |
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| Abstract | The compositional schoichiometry and structural morphology of n-alkanethiol self-assembled monolayers (SAMs) formed on the GaAs(001) surface was investigated by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). In order to decompose high resolution ARXPS spectra, synthetic lineshape calibration was first referred to Ar-ion beam sputtered GaAs using low-asymmetry Doniach-Sunjic lineshape profiles. Following SAM formation, the As-S chemical state was located at +1.8 eV from GaAs in the As 3d region in agreement with data following GaAs passivation with inorganic sulphides, and was estimated to represent a bond fraction of 30-50% relative to the total number of S-GaAs bonds. The surface was observed to be Ga-rich, but no Ga-S interface component could be resolved. The surface density of elemental As was quantified using fractional overlayer modeling. A value of 2.9-4.2x1o(14) cm(-2) was obtained, which represents a monolayer fraction of 35-50%. Similarly, fractional overlayer modeling was used to estimate the SAM uniformity, and a value of 92% was achieved. |
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| Language | English |
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| NRC number | NRC-EME-53093 |
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| NPARC number | 21275976 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | fd76a161-c48c-4f8f-bc48-be775e5613cf |
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| Record created | 2015-08-25 |
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| Record modified | 2020-04-22 |
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