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Spatially-resolved EELS and EDS of HfOxNy Gate Dielectrics Deposited by MOCVD using [C2H52N]4Hf with NO and O2

From National Research Council Canada

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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
ConferenceMicroscopy & Microanalysis 2004, Aug 04
Publication date
In
  • Microscopy & Microanalysis 2004, Aug 04 [Proceedings] (2004): p606–.
NPARC number12346290
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Record identifierf42b882a-cdb8-4fa7-923e-532ce4f49a1d
Record created2009-09-17
Record modified2020-04-17
Date modified: