Modeling RF MOSFETs after Electrical Stress using Low-Noise Microstrip Line Layout
Modeling RF MOSFETs after Electrical Stress using Low-Noise Microstrip Line Layout
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Format | Text, Article |
Conference | Radio Frequency Integrated Circuits Symposium 2005, 2005 |
NPARC number | 12346730 |
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Record identifier | f4077f52-a64c-498a-8dda-ff4510cdafed |
Record created | 2009-09-17 |
Record modified | 2020-04-16 |
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