Phonons on group-III nitride (110) surfaces

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Journal titlePhysical Review B : Condensed Matter and Materials Physics
Article number115304
Pages115304-1115304-11; # of pages: 11
Subjectsurface and interface dynamics and vibrations; surface states; band structure; electron density of states
AbstractWe have applied the adiabatic bond-charge model within a supercell approach to study the lattice dynamics of group-III nitride (110) surfaces. The structural and electronic information necessary for these calculations is obtained from using the ab initio pseudopotential method. The phonon dispersion curves for the group-III nitride (110) surfaces are presented and compared with each other in detail. From this comparison, it is found that the InN(110) and GaN(110) surfaces show similar dynamical behavior due to their large cation-anion mass differences. It is pointed out that in general surface phonon modes on group-III nitride (110) can be related to their counterparts on non-nitride III-V(110) and II-VI(110) surfaces provided that results are scaled with respect to the reduced mass and lattice constant differences. The rotational phonon mode predicted for other semiconductor surfaces is also identified for the group-III nitride (110) surfaces.
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AffiliationNational Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12328052
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Record identifierf20276fc-923c-44eb-8827-f7ed2a55115d
Record created2009-09-10
Record modified2016-05-09
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